IndiumV3, Russie, Analysis, bibRecord, 000633

Magnetotransport of 2D-electrons and holes at a type II broken-gap single heterojunction doped with acceptor impurity

Identifieur interne : 000633 ( Russie/Analysis ); précédent : 000632; suivant : 000634

Magnetotransport of 2D-electrons and holes at a type II broken-gap single heterojunction doped with acceptor impurity

Auteurs : RBID : Pascal:03-0508673

Descripteurs français

Pascal (Inist)
- Magnétorésistance, Bande interdite, Dopage, Centre accepteur, Impureté, Transport quantique, Effet Shubnikov de Haas, Addition zinc, Hétérojonction, Indium arséniure, Gallium Arsénioantimoniure, Indium Arsénioantimoniure, Composé quaternaire, Composé binaire, Etude expérimentale, InAs, As In, GaIn0,16As0,22Sb, 7363, As Ga In Sb.
Wicri :
- concept : Dopage.

English descriptors

KwdEn :
- Acceptor center, Binary compounds, Doping, Energy gap, Experimental study, Gallium Antimonides arsenides, Heterojunctions, Impurities, Indium Antimonides arsenides, Indium arsenides, Magnetoresistance, Quantum transport, Quaternary compounds, Shubnikov-de Haas effect, Zinc additions.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 00C563
to stream Main, to step Repository: 00D050
to stream Russie, to step Extraction: 000633

Links to Exploration step

Pascal:03-0508673

Le document en format XML

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<author><name sortKey="Moiseev, K D" uniqKey="Moiseev K">K. D. Moiseev</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute</s1>
<s2>St Petersburg</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>Ioffe Physico-Technical Institute</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Berezovets, V A" uniqKey="Berezovets V">V. A. Berezovets</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute</s1>
<s2>St Petersburg</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
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<sZ>3 aut.</sZ>
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<country>Russie</country>
<wicri:noRegion>Ioffe Physico-Technical Institute</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Mikhailova, M P" uniqKey="Mikhailova M">M. P. Mikhailova</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute</s1>
<s2>St Petersburg</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>Russie</country>
<wicri:noRegion>Ioffe Physico-Technical Institute</wicri:noRegion>
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</author>
<author><name sortKey="Nizhankovskii, V I" uniqKey="Nizhankovskii V">V. I. Nizhankovskii</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>International High Magnetic Fields and Low-Temperature Laboratory</s1>
<s2>Wroclaw</s2>
<s3>POL</s3>
<sZ>4 aut.</sZ>
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<country>Pologne</country>
<wicri:noRegion>International High Magnetic Fields and Low-Temperature Laboratory</wicri:noRegion>
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</author>
<author><name sortKey="Parfeniev, R V" uniqKey="Parfeniev R">R. V. Parfeniev</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute</s1>
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<s3>RUS</s3>
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<wicri:noRegion>Ioffe Physico-Technical Institute</wicri:noRegion>
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<author><name sortKey="Yakovlev, Yu P" uniqKey="Yakovlev Y">Yu. P. Yakovlev</name>
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<s2>St Petersburg</s2>
<s3>RUS</s3>
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<country>Russie</country>
<wicri:noRegion>Ioffe Physico-Technical Institute</wicri:noRegion>
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<publicationStmt><idno type="inist">03-0508673</idno>
<date when="2003">2003</date>
<idno type="stanalyst">PASCAL 03-0508673 INIST</idno>
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<idno type="wicri:Area/Main/Corpus">00C563</idno>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Acceptor center</term>
<term>Binary compounds</term>
<term>Doping</term>
<term>Energy gap</term>
<term>Experimental study</term>
<term>Gallium Antimonides arsenides</term>
<term>Heterojunctions</term>
<term>Impurities</term>
<term>Indium Antimonides arsenides</term>
<term>Indium arsenides</term>
<term>Magnetoresistance</term>
<term>Quantum transport</term>
<term>Quaternary compounds</term>
<term>Shubnikov-de Haas effect</term>
<term>Zinc additions</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Magnétorésistance</term>
<term>Bande interdite</term>
<term>Dopage</term>
<term>Centre accepteur</term>
<term>Impureté</term>
<term>Transport quantique</term>
<term>Effet Shubnikov de Haas</term>
<term>Addition zinc</term>
<term>Hétérojonction</term>
<term>Indium arséniure</term>
<term>Gallium Arsénioantimoniure</term>
<term>Indium Arsénioantimoniure</term>
<term>Composé quaternaire</term>
<term>Composé binaire</term>
<term>Etude expérimentale</term>
<term>InAs</term>
<term>As In</term>
<term>GaIn0,16As0,22Sb</term>
<term>7363</term>
<term>As Ga In Sb</term>
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<s9>ed.</s9>
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<s9>ed.</s9>
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<fA14 i1="01"><s1>Ioffe Physico-Technical Institute</s1>
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<fC03 i1="04" i2="X" l="ENG"><s0>Acceptor center</s0>
<s5>05</s5>
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<fC03 i1="08" i2="3" l="FRE"><s0>Addition zinc</s0>
<s5>10</s5>
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<fC03 i1="08" i2="3" l="ENG"><s0>Zinc additions</s0>
<s5>10</s5>
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<fC03 i1="11" i2="X" l="FRE"><s0>Gallium Arsénioantimoniure</s0>
<s2>NC</s2>
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<fC03 i1="11" i2="X" l="ENG"><s0>Gallium Antimonides arsenides</s0>
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<fC03 i1="11" i2="X" l="SPA"><s0>Antimoniuro arseniuro</s0>
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<s2>NA</s2>
<s5>17</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Indium Arsénioantimoniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>18</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Indium Antimonides arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>18</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Antimoniuro arseniuro</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>18</s5>
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<fC03 i1="13" i2="3" l="FRE"><s0>Composé quaternaire</s0>
<s5>19</s5>
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<fC03 i1="13" i2="3" l="ENG"><s0>Quaternary compounds</s0>
<s5>19</s5>
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<s5>21</s5>
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<fC03 i1="15" i2="3" l="ENG"><s0>Experimental study</s0>
<s5>21</s5>
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<fC03 i1="16" i2="3" l="FRE"><s0>InAs</s0>
<s4>INC</s4>
<s5>53</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>As In</s0>
<s4>INC</s4>
<s5>54</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>GaIn0,16As0,22Sb</s0>
<s4>INC</s4>
<s5>55</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>7363</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>As Ga In Sb</s0>
<s4>INC</s4>
<s5>92</s5>
</fC03>
<fN21><s1>335</s1>
</fN21>
<fN82><s1>PSI</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>International symposium on nanostructures</s1>
<s3>St. Petersburg RUS</s3>
<s4>2002-06-17</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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   |clé=     Pascal:03-0508673
   |texte=   Magnetotransport of 2D-electrons and holes at a type II broken-gap single heterojunction doped with acceptor impurity
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Magnetotransport of 2D-electrons and holes at a type II broken-gap single heterojunction doped with acceptor impurity

Magnetotransport of 2D-electrons and holes at a type II broken-gap single heterojunction doped with acceptor impurity

Descripteurs français

English descriptors

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri